High gain MOSFET transistors and systematic use of state-of-the-art manufacturing methods, have helped us to find effective solutions for the design of this new equipment. The amplifier, of simple and rugged construction, is able to satisfy the requests of all those end-users looking for top-quality equipment at reasonable prices. The RF power input is divided by 4 by means of a power splitter and is then connected to 4 x BLF278 MOSFETs.
The power amplifier is lightweight with broad-band characteristics over the entire VHF FM range. The compact design and the internal configuration of the modules, allow excellent access to all components. All the power components are generously over-rated to ensure excellent reliability. The cooling system of the equipment makes possible to keep all components which dissipate heat, at low temperature figures, thus permitting reliability and very high MTBF.
1 KW Power Amplifier Module The input power of the module is connected to a Wilkinson splitter, and is then sent to the input of two 3dB couplers. In case of failure of one of the MOSFETs, the unbalanced power is connected to four resistors. The amplifier circuit is composed of four BLF278 MOSFETs which permit a very high redundancy thanks to four- level modularity. The MOSFETs are provided with a bias circuit that assures the optimal impedance matching. The temperature, the Voltage and the RF Power figures are controlled by the microprocessor board.
Filter And Directional Coupler This module is composed of the Low Pass Filter and of the Directional Coupler.The filter is constant matching type and includes two ( network sections, with second harmonic-traps devices. The directional coupler has been realized with microstrip technology.
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